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ISO 23812:2009

Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials

Standard Details

ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.

It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.

It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.

General Information

Status : Published
Standard Type: Main
Document No: ISO 23812:2009
Document Year: 2009
Pages: 19
Edition: 1

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ISO 23812:2009
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