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IEC 62880-1:2017

Semiconductor devices - Stress migration test standard - Part 1: Copper stress migration test standard

Standard Details

IEC 62880-1:2017(E) describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method can be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time.

General Information

Status : ACTIVE
Standard Type: Main
Document No: IEC 62880-1:2017
Document Year: 2017
Pages: 24
Edition: 1.0
  • Section Volume:
  • TC 47 Semiconductor devices
  • ICS:
  • 31.080.01 Semiconductor devices in general

Life Cycle

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IEC 62880-1:2017
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