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IEC 63275-1:2022 (EN-FR)

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

Standard Details

IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).

General Information

Status : ACTIVE
Standard Type: Main
Document No: IEC 63275-1:2022 (EN-FR)
Document Year: 2022
Pages: 25
Edition: 1.0
  • Section Volume:
  • TC 47 Semiconductor devices

Life Cycle

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IEC 63275-1:2022 (EN-FR)
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