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IEC 63068-4:2022

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence

Standard Details

IEC 63068-4:2022(E) provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical inspection and photoluminescence (PL). Additionally, this document exemplifies optical inspection and PL images to enable the detection and categorization of defects in SiC homoepitaxial wafers.

General Information

Status : ACTIVE
Standard Type: Main
Document No: IEC 63068-4:2022
Document Year: 2022
Pages: 25
Edition: 1.0
  • Section Volume:
  • TC 47 Semiconductor devices

Life Cycle

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IEC 63068-4:2022
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