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ISO 21466:2019

Microbeam analysis — Scanning electron microscopy — Method for evaluating critical dimensions by CD-SEM

Standard Details

This document specifies the structure model with related parameters, file format and fitting procedure for characterizing critical dimension (CD) values for wafer and photomask by imaging with a critical dimension scanning electron microscope (CD-SEM) by the model-based library (MBL) method. The method is applicable to linewidth determination for specimen, such as, gate on wafer, photomask, single isolated or dense line feature pattern down to size of 10 nm.

General Information

Status : Published
Standard Type: Main
Document No: ISO 21466:2019
Document Year: 2019
Pages: 47
Edition: 1

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ISO 21466:2019
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