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Status : Active
Standard Type : Main
Document No : ISO 17560:2014
Document Year : 2014
Pages : 10
Edition : 2
Section Volume : Secondary ion mass spectrometry (ISO/TC 201/SC 6.)
ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.